蔡榮輝 (Jung-Hui Tsai)特聘教授
個人學歷
國立成功大學電機博士
研究專長
半導體元件、高速元件、光電元件、半導體氣體感測器
聯絡電話
(07)7172930 分機 7910
電子信箱
jhtsai@nknu.edu.tw
互動時段
週二、三 12：00 ~ 13：30
學經歷(Click)
學歷
經歷
| 畢業學校 | 主修學門系所 | 學位 |
|---|---|---|
| 國立成功大學 | 電機工程研究所 | 博士 |
| 服務機關 | 服務部門／系所 | 職稱 |
|---|---|---|
| 旺宏電子公司 | 製程整合研發 | 高級工程師 |
| 建國技術學院 | 電子工程系 | 助理教授 |
| 國立高雄師範大學 | 物理學系 | 助理教授 |
| 國立高雄師範大學 | 物理學系 | 副教授 |
| 國立高雄師範大學 | 物理學系 | 教授 |
| 國立高雄師範大學 | 電子工程學系 | 教授 |
| 國立高雄師範大學 | 電子工程學系 | 特聘教授 |
學術榮譽(Click)
| 年度 | 得獎項目 |
| 109 | 國立高雄師範大學特聘教授 |
| 108 | 科技部特殊優秀人才 |
| 108 | 國立高雄師範大學108年度研究優良獎(民國108年12月) |
| 107 | 科技部特殊優秀人才 |
| 107 | 國立高雄師範大學107年度研究優良獎(民國107年12月) |
| 106 | 科技部特殊優秀人才 |
| 106 | 國立高雄師範大學106年度研究優良獎(民國106年12月) |
| 105 | 科技部特殊優秀人才 |
| 105 | 國立高雄師範大學105年度研究優良獎(民國105年12月) |
| 104 | 科技部特殊優秀人才 |
| 104 | 國立高雄師範大學104年度研究優良獎(民國104年12月) |
| 103 | 科技部特殊優秀人才 |
| 103 | 國立高雄師範大學103年度研究優良獎(民國103年12月) |
| 102 | 科技部特殊優秀人才 |
| 102 | 國立高雄師範大學102年度研究優良獎(民國102年12月) |
| 101 | 國科會特殊優秀人才 |
| 101 | 國立高雄師範大學101年度研究優良獎(民國101年12月) |
| 100 | 國科會特殊優秀人才 |
| 100 | 國立高雄師範大學100年度研究優良獎(民國100年12月) |
| 99 | 國科會特殊優秀人才 |
| 99 | 國立高雄師範大學99年度研究優良獎(民國99年12月) |
| 99 | 中國電機工程學會高雄市分會99年度『傑出工程教授獎』(民國99年6月) |
| 98 | 國立高雄師範大學98年度研究優良獎(民國98年12月) |
| 97 | 中國電機工程學會高雄市分會97年度『傑出電機工程師獎』(民國97年6月) |
| 97 | 中國工程師學會高雄市分會97年度『工程教授獎』(民國97年6月) |
| 97 | 國立高雄師範大學97年度研究優良獎(民國97年12月) |
| 96 | 國立高雄師範大學96年度研究優良獎(民國96年12月) |
| 95 | 國立高雄師範大學95年度研究優良獎(民國95年12月) |
| 95 | 2006 International Electronics Devices and Materials Symposia (IEDMS 2006)『優等論文獎』(民國95年12月) |
| 95 | 95年12月獲得中國電機工程學會『優秀青年電機工程師獎』(民國95年12月) |
| 94 | 國立高雄師範大學94年度研究優良獎(民國94年12月) |
| 93 | 國立高雄師範大學93年度研究優良獎(民國93年12月) |
| 92 | 國立高雄師範大學92年度研究優良獎(民國92年12月) |
| 92 | 國立高雄師範大學92年度優良導師獎(民國92年12月) |
| 91 | 國立高雄師範大學91年度研究優良獎(民國91年12月) |
| 91 | 國立高雄師範大學91年度優良導師獎(民國91年12月) |
| 86 | 斐陶斐榮譽學會會員 |
| 86 | 全國龍騰科技博士論文獎 |
期刊論文(Click)
| 項次 | 論文／期刊 |
| 1. | Jung-Hui Tsai, Pao-Sheng Lin, Wen-Shiung Lour, and Wen-Chau Liu, “Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers,” ECS J. Solid State Sci. Technol., Vol. 8, No. 10, pp. Q211-Q216, 2019. [SCI, EI] |
| 2. | Jung-Hui Tsai, Pao-Sheng Lin, Yu-Chi Chen, Syuan-Hao Liou, and Jing-Shiuan Niu, “Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches,” Semiconductors, Vol. 53, No. 3, pp. 406–410, 2019. [SCI, EI] |
| 3. | Ching-Hong Chang, Yu-Lin Lee, Zih-Fong Wang, Rong-Chau Liu, Jung-Hui Tsai, and Wen-Chau Liu, “Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO2Nanoparticle/Microsphere Passivation Layer, “IEEE Trans. Electron Devices, Vol. 66, No. 1, pp. 505 - 511, 2019. [SCI, EI] |
| 4. | Jung-Hui Tsai and Jing-Shiuan Niu, “Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors, International Journal of Hydrogen Energy, Vol. 44, No. 3, pp. 2053-2058, 2019. [SCI, EI] |
| 5. | Jung-Hui Tsai, Jing-Shiuan Niu, Yu-Chi Chen, and Xin-Yi Huang, “Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors, ECS J. Solid State Sci. Technol., Vol. 7, No. 11, pp. Q191-Q195, 2018. [SCI, EI] |
| 6. | Yi-Chen Wu, Jung-Hui Tsai, Syuan-Hao Liou, Pao-Sheng Lin, Yu-Chi Chen, and Te-Kuang Chiang, “InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity”, Science of Advanced Materials, Vol. 10, No. 5, pp. 651-654, 2018. [SCI, EI] |
| 7. | Jung-Hui Tsai, Syuan-Hao Liou, Pao-Sheng Lin, and Yu-Chi Chen, “InGaP/InGaAs field-effect transistor typed hydrogen sensor,” Applied Surface Science, Vol. 432, Part B, pp. 224-227, 2018. [SCI, EI] |
| 8. | Jung-Hui Tsai, Yi-Ting Chao, Pao-Sheng Lin, Syuan-Hao Liou, and Wen-Chau Liu, “Characteristics of InGaP/InGaAs Pseudomophic Field-Effect Transistors with Modulated InGaAs Doping Channels”, Science of Advanced Materials, Vol. 10, No. 5, pp.632-635, 2018. [SCI, EI] |
| 9. | Syuan-Hao Liou, Jung-Hui Tsai, Wen-Chau Liu, Pao-Sheng Lin, and Yu-Chi Chen, “Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes,” Superlattices and Microstructures, vol. 110, pp. 171-179, 2017. [SCI, EI] |
| 10. | Syuan-Hao Liou, Jung-Hui Tsai, Wen-Chau Liu, Pao-Sheng Lin, and Yu-Chi Chen, “An Improved GaN-Based Light-Emitting Diode with a SiO2 Current Blocking Layer Embedded in Stair-Like AZO Transparent Structure,” ECS J. Solid State Sci. Technol., Vol. 6, No. 10, pp. R149-R153, 2017. [SCI, EI] |
| 11. | Chi-Hsiang Hsu, Sheng-Yi Chen, Wei-Cheng Chen, Ching-Hong Chang, Chun-Yen Chen, Jung-Hui Tsai, and Wen-Chau Liu, “Study of a GaN-Based LED With an Al/AZO Composite Transparent Conductive Layer, IEEE Trans. Electron Devices, Vol. 64, No. 9, pp. 3678 - 3682, 2017. [SCI, EI] |
| 12. | Jian-Kai Liou, Yi-Chun Chan, Wei-Cheng Chen, Ching-Hong Chang, Chun-Yen Chen, Jung-Hui Tsai, and Wen-Chau Liu, “Characteristics of GaN-Based LEDs With Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures,” IEEE Trans. Electron Devices, Vol. 64, No. 7, pp. 2854 - 2858, 2017. [SCI, EI] |
| 13. | Ching-Wen Hung, Ching-Hong Chang, Wei-Cheng Chen, Chun-Chia Chen, Huey-Ing Chen, Yu-Ting Tsai, Jung-Hui Tsai, Wen-Chau Liu, “A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach,” Solid-State Electron., Vol.124, No. 10, pp. 5-9, 2016. [SCI, EI] |
| 14. | Jung-Hui Tsai, “Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor,” Superlattices and Microstructures, Vol. 95, pp. 83-87, 2016. [SCI, EI] |
| 15. | Jung-Hui Tsai, “Al0.2Ga0.3In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs Triple Heterostructure-Emitter Bipolar Transistor,” Science of Advanced Materials, Vol.8, No. 2, pp. 421-424, 2016. [SCI, EI] |
| 16. | Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Jung-Hui Tsai and Hung-Hsi Huang, “Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method,” Jpn. J. Appl. Phys., Vol. 55, Vol. 4, pp. 044102, 2016. [SCI, EI] |
| 17. | Jian-Kai Liou, Chen, Wei-Cheng Chen, Ching-Hong Chang, Yu-Chih Chang, Jung-Hui Tsai, Wen-Chau Liu, “Enhanced Light Extraction of a High-Power GaN-Based Light-Emitting Diode With a Nanohemispherical Hybrid Backside Reflector,” IEEE Trans. Electron Devices, Vol. 62, No. 10, pp. 3296-3301, 2015. [SCI, EI] |
| 18. | Jung-Hui Tsai*, Chung-Cheng Chiang, and Fu-Min Wang, “High-performance AlGaN/AlN/GaN high electron mobility transistor with broad gate-to-source operation voltages,” Physica Status Solidi (c), Vol. 12, No. 6, pp. 596-599, 2015. |
| 19. | Yi-Chen Wu, Jung-Hui Tsai, Te-Kuang Chiang, and Fu-Min Wang, “Comparative Investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs Heterojunction Bipolar Transistors,” Semiconductors, vol. 49, no.10, pp 1361-1364, 2015. [SCI, EI] |
| 20. | Jung-Hui Tsai, “On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors,” Appl. Phys. Lett., Vol. 106, No. 6, pp. 063502 (4 pages), 2015. [SCI, EI] |
| 21. | Chun-Chia Chen, Huey-Ing Chen, I-Ping Liu, Po-Cheng Chou, Jian-Kai Liou, Jung-Hui Tsai, Wen-Chau Liu, “An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches,” Solid-State Electronics, Vol. 105, No. 3, pp. 45-50, 2015. [SCI, EI] |
| 22. | Jung-Hui Tsai*, “Performance of AlGaInP/InGaAs enhancement/depletion-mode pseudomorphic doping-channel field-effect transistors,” Superlattices and Microstructures, Vol. 78, pp. 156-162, 2015. [SCI, EI] MOST 103-2221-E-017-013 |
| 23. | Yi-Chen Wu, Jung-Hui Tsai, Te-Kuang Chiang, Chung-Cheng Chiang, and Fu-Min Wang, “Comparative Investigation of GaAsSb/InGaAs Type-II and InP/InGaAs Type-I Doped-Channel Field-Effect Transistors,” Semiconductors, Vol. 49, No. 2, pp. 254–258, 2015. [SCI, EI] |
| 24. | Jung-Hui Tsai, “High-performance AlGaInP tunneling heterostructure-emitter bipolar transistor,” Superlattices and Microstructures, Vol. 75, pp. 543-550, 2014. [SCI, EI] |
| 25. | Jung-Hui Tsai, You-Ren Wu, Chung-Cheng Chiang, Fu-Min Wang, and Wen-Chau Liu, ”Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors,” Semiconductors, Vol. 48, No. 9, pp. 1222–1225, 2014. [SCI, EI] |
| 26. | Han-Yin Liu, Ching-Sung Lee, Fu-Chen Liao, Wei-Chou Hsu, Bo-Yi Chou, Jung-Hui Tsai, and Hsin-Yuan Leed,” Comparative Studies on AlGaN/GaN MOS-HEMTs with Stacked La2O3/Al2O3 Dielectric Structures,” ECS Journal of Solid State Science and Technology, 3, No. 8, pp. N115-N119, 2014. |
| 27. | Jian-Kai Liou, Po-Cheng Chou, Chun-Chia Chen, Yu-Chih Chang, Wei-Chou Hsu, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chan Liu, “Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled SiO2 Nanosphere Monolayer,” IEEE Trans. Electron Devices, 61, No. 3, pp. 831-837, 2014. [SCI, EI] |
| 28. | Jung-Hui Tsai, “Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application,” Superlattices and Microstructures, Vol. 65, pp. 256-263, 2014. [SCI, EI] |
| 29. | Yi-Chen Wu, Jung-Hui Tsai, Te-Kuang Chiang, Chung-Cheng Chiang and Fu-Min Wang, “High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers,” Solid-State Electron., Vol. 92, No. 2, pp. 52-56, 2014. [SCI, EI] |
| 30. | Jung-Hui Tsai, Ching-Sung Lee, Chung-Cheng Chiang, and Yi-Ting Chao, “Comparative Investigation of InP/InGaAs Heterostructure-Emitter Tunneling and Superlattice Bipolar Transistors,” Semiconductors, Vol. 48, No. 6, pp. 809-814, 2014. [SCI, EI] |
| 31. | Chun-Chia Chen, Huey-Ing Chen Po-Cheng Chou, Jian-Kai Liou, Yung-Jen Chiou, Jung-Hui Tsai, and Wen-Chau Liu, “Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure,” IEEE Electron Device Lett., Vol. 35, No. 1, pp. 18-20, 2014. |
| 32. | Jian-Kai Liou, Chun-Chia Chen, Po-Cheng Chou, Shiou-Ying Cheng, Jung-Hui Tsai, Rong-Chau Liu, , Wen-Chau Liu,“Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface,”IEEE Trans. Electron Devices, Vol. 60, No. 7, pp. 2282-2289, 2013. [SCI, EI] |
| 33. | Jung-Hui Tsai, Ching-Sung Lee, Jia-Cing Jhou, You-Ren Wu, Chung-Cheng Chiang, Yi-Ting Chao, and Wen-Chau Liu,“Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction,”Semiconductors, Vol. 47, No. 10, pp. 11391-1396, 2013. [SCI, EI] |
| 34. | Jung-Hui Tsai, Chia-Hong Huang, Jhih-Jhong Ou-Yang, Yi-Ting Chao, Jia-Cing Jhou, and You-Ren Wu,“Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation,”accepted, Thin Solid Films, 2013. [SCI, EI] |
| 35. | Chia-Hong Huang, Chung-Cheng Chang, Jung-Hui Tsai,“MOS Solar Cells with Oxides Deposited by Sol-Gel Spin-Coating Techniques,”Semiconductors, Vol. 47, No. 6, pp. 835-837, 2013. [SCI, EI] |
| 36. | Chieh Lo, Shih-Wei Tan, Chih-Yin Wei, Jung-Hui Tsai, and Wen-Shiung Lour,“Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture,”International Journal of Hydrogen Energy, Vol. 38, No. 1, pp. 313-318, 2013. [SCI, EI] |
| 37. | Jung-Hui Tsai, Chia-Hong Huang, Yung-Chun Ma, and You-Ren Wu,“Comparative Investigation of InP/InGaAs Abrupt, Setback, and Heterostructure-Emitter Heterojunction Bipolar Transistors,”Vol. 46, No. 12, pp. 1539-1544, Semiconductors, 2012 [SCI, EI] |
| 38. | Chieh Lo, Shih-Wei Tan, Chih-Yin Wei, Jung-Hui Tsai, Kuo-Yen Hsu, and Wen-Shiung Lour, “Unidirectional sensing characteristics of structured Au-GaN-Pt diodes for differential-pair hydrogen sensors,”International Journal of Hydrogen Energy, Vol. 37, No. 23, pp. 18579-18587, 2012. [SCI, EI] |
| 39. | Jung-Hui Tsai, Wen-Shiung Lour, Yi-Ting Chao, Sheng-Shiun Ye, Yung-Chun Ma, Jia-Cing Jhou, You-Ren Wu, and Jhih-Jhong Ou-Yang,“An InP/InGaAs metamorphic d-doped heterojunction bipolar transistor with high current gain and low offset voltage,”Thin Solid Films, Vol. 521, pp. 172-175, 2012. [SCI, EI] |
| 40. | Jung-Hui Tsai, Chia-Hong Huang, Wen-Shiung Lour, Yi-Ting Chao, Jhih-Jhong Ou-Yang, and Jia-Cing Jhou,“High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode,”Thin Solid Films, Vol. 521, pp. 168-171, 2012. [SCI, EI] |
| 41. | Jung-Hui Tsai, Sheng-Shiun Ye, Der-Feng Guo, and Wen-Shiung Lour,“Comparative Study of InGaP/GaAs High Electron Mobility Transistors with Upper and Lower Delta-Doped Supplied Layers,” Semiconductors, Vol.46, No. 4, pp. 514-518, 2012. [SCI, EI] |
| 42. | Jung-Hui Tsai,“Influence of gate thermal oxide layer on InGaP/InGaAs doping-channel field-effect transistors,”Materials Chemistry and Physics, Vol. 133, No. 1, pp. 328-332, 2012. [SCI, EI] |
| 43. | Shih-Wei Tan, Jung-Hui Tsai, Shih-Wen Lai, Chieh Lo, and Wen-Shiung Lour,“Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer,”International Journal of Hydrogen Energy, Vol. 36, No. 23, pp. 15446-15454, 2011. [SCI, EI] |
| 44. | Jung-Hui Tsai,“Study of Metamorphic Co-Integrated Heterostructure Bipolar and Field-Effect Transistors (BiFETs),”J. Electrochemical Society, Vol. 158, No. 9, pp. H889-H891, 2011. [SCI, EI] NSC 99-2221-E-017-018 |
| 45. | Jung-Hui Tsai, Der-Feng Guo, and Wen-Shiung Lour,“Comparative investigation of InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles,”Semiconductors, Vol. 45, No. 9, pp. 1231-1233, 2011. [SCI, EI] |
| 46. | Jung-Hui Tsai, “Comparative studies on InGaP/GaAs heterostructure-emitter bipolar transistors with tunneling- and superlattice-confinement structures,” J. Electrochemical Society, Vol. 158, No. 5, pp. H583-H588, 2011. [SCI, EI] NSC 99-2221-E-017-018 |
| 47. | Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, and Sheng-Shiun Ye, “A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT),” Semiconductors, Vol. 45, No. 5, pp. 646-649, 2011. [SCI, EI] NSC 98-2221-E-017-012 |
| 48. | Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hua Huang, Sheng-Shiun Ye, and Yung-Chun Ma, “Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels,” Electron. Lett., Vol. 46, No. 22, pp. 1522-1523, 2010. [SCI, EI] NSC 99-2221-E-017-018 |
| 49. | Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, and Ying-Feng Dai, “InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures,” Semiconductors, Vol. 44, No. 8, pp. 1096-1100, 2010. [SCI, EI] NSC 98-2221-E-017-012 |
| 50. | Chia-Hua Huang, Jung-Hui Tsai, Tzung-Min Tsai, Kuo-Yen Hsu, Wei-Chen Yang, Hsuan-Wei Huang, and Wen-Shung Lour, “Hydrogen sensor with Pd nanoparticles upon an interfacial layer with oxygen,” Applied Physics Express, Vol. 3, no. 7, pp. 075001 (3 pages), 2010. |
| 51. | Jung-Hui Tsai, Yuan-Hong Lee, Ning-Feng Dale, Jhih-Syuan Sheng, Yung-Chun Ma, and Sheng-Shiun Ye, “Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor,” Appl. Phys. Lett., Vol. 96, No. 6, pp. 063505 (3 pages), 2010. [SCI, EI] NSC 98-2221-E-017-012 |
| 52. | Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee, Jhih-Syuan Sheng, and Wen-Chau Liu, “Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor,” Solid-State Electron., Vol. 54, No. 3, pp. 275-278, 2010. [SCI, EI] NSC 97-2221-E-017-012 |
| 53. | Jung-Hui Tsai, Wen-Shiung Lour, Tzu-Yen Weng, and Chien-Ming Li, “InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage,” Semiconductors, Vol. 44, No. 2, pp. 223-227, 2010. [SCI, EI] NSC 97-2221-E-017-012 |
| 54. | Jung-Hui Tsai, Yuan-Hong Lee, Ning-Feng Dale, and Wen-Shiung Lour, “InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer,” European Physical Journal Applied Physics, Vol. 48, No. 2, pp. 20303 (5 pages), November, 2009. [SCI, EI] NSC 98-2221-E-017-012 |
| 55. | Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Tzung-Min Tsai, Kuo-Yen Hsu, and Wen-Shiung Lour, “Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure,” Sens. Actuators B, Vol.141, No. 2, pp. 532-537, 2009. [SCI, EI] |
| 56. | Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tzung-Min Tsai, Kuo-Yen Hsu, and Wen-Shiung Lour, “Integrated hydrogen-sensing amplifier with GaAs Schottky-type diode and InGaP–GaAs heterojunction bipolar transistor,” IEEE Electron Device Lett., Vol. 30, No.9, pp. 898-900, 2009. [SCI, EI] |
| 57. | Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, “Comprehensive investigation on planar type of Pd–GaN hydrogen sensors,” International Journal of Hydrogen Energy, Vol. 34, No. 13, pp. 5604-5615, 2009. [SCI, EI] |
| 58. | Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau Liu, “InGaP/GaAs/InGaAs -doped p-channel field-effect transistor with p+/n+/p camel-like gate structure,” Electron. Lett., Vol. 45, No. 11, pp. 572-573, 2009. [SCI, EI] NSC 97-2221-E-017-012 |
| 59. | Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, and Der-Feng Guo, “High-performance InGaP/GaAs pnp -doped heterojunction bipolar transistor,” Semiconductor, Vol.43, No. 7, pp. 939-942, 2009. [SCI, EI] NSC 97-2221-E-017-012 |
| 60. | Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, “Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance,” Sens. Actuators B, Vol.138, No. 2, pp. 422-427, 2009. [SCI, EI] |
| 61. | Shao-Yen Chiu, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Hsuan-Wei Huang, Jung-Hui Tsai and Wen-Shiung Lour, “GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration,” Jpn. J. Appl. Phys., Vol. 48, No. 4, pp. 041002 (5 pages), 2009. [SCI, EI] |
| 62. | Shao-Yen Chiu, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Jung-Hui Tsai and Wen-Shiung Lour, “GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles,” Electron. Lett., Vol. 45, No. 4, p 231-233, 2009. [SCI, EI] |
| 63. | Shao-Yen Chiu, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Jung-Hui Tsai and Wen-Shiung Lour, “High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2,” Semiconductor Science and Technology, Vol. 24, No. 4, pp. 045007 (4pp), 2009. [SCI, EI] |
| 64. | Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, and Wen-Chau Liu, “On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs),” Solid-State Electron., Vol. 53, No. 2, pp. 190-194, 2009. [SCI, EI] |
| 65. | Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, and Yin-Shan Huang, “Microwave complementary doped-channel field-effect transistors,” Superlattices & Microstructures, Vol.45, No. 1, pp. 33-38, 2009. [SCI, EI] NSC 96-2221-E-017-012 |
| 66. | Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Ghun-Wei Ku, and Wen-Chau Liu, “Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors,” Electrochem. Solid-State Lett., Vol. 12, No. 2, pp. H41-H43, 2009. [SCI, EI] |
| 67. | Li-Yang Chen, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Tsung-Han Tsai, Tzu-Pin Chen, Yi-Chun Liu and Wen-Chau Liu, “Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor,” Semiconductor Science and Technology, Vol. 23, No. 12, pp. 125041 (6pp), 2008. [SCI, EI] |
| 68. | Shao-Yen Chiu, Hsuan Wei Huang, Tze Hsuan Huang, Kun Chieh Liang, Kang Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, “High-sensitivity metal-semiconductor-metal hydrogen sensors with a mixture of Pd and SiO2 forming three-dimension dipoles,” IEEE Electron Device Lett., Vol.29, No. 12, pp. 1328-1331, 2008. [SCI, EI] |
| 69. | Jung-Hui Tsai, Tzu-Yen Weng, and Chien-Ming Li, “Integration of enhancement/depletion-mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application,” Semiconductor Science and Technology, Vol. 23, No. 7, pp. 075018 (5pp), 2008. [SCI, EI] NSC 96-2221-E-017-012 |
| 70. | Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, and Yin-Shan Huang, “Comparison of heterstructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures, Solid-State Electron., Vol. 52, No. 7, pp. 1018-1023, 2008. [SCI, EI] NSC 96-2221-E-017-012 |
| 71. | Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng, Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung and Wen-Chau Liu, “Investigation on heterostructural optoelectronic switches,” Surface Review and Letters, Vol. 15, No. 1/2, pp. 139-144, 2008. |
| 72. | Jung-Hui Tsai, Wen-Chau Liu, Der-Feng Guo, Yu-Chi Kang, Shao-Yen Chiu, and Wen-Shiung Lour, “Electrical properties of InP/InGaAs pnp heterostructure-emitter bipolar transistor,” Semiconductor, Vol. 42, No. 3, pp. 346-349, 2008. [SCI, EI] NSC 95-2221-E-017-013 |
| 73. | Jung-Hui Tsai, Tzu-Yen Weng and King-Poul Zhu, “Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages,” Superlattices & Microstructures, Vol. 43, No. 2, pp. 73-80, 2008. [SCI, EI] NSC 95-2221-E-017-013 |
| 74. | Shao-Yen Chiu, Hon-Rung Chen, Wei-Tien Chen, Meng-Kai Hsu, Wen-Chau Liu, Jung-Hui Tsai, and Wen-Shiung Lour, “Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)2S treatment,” Japanese Journal of Applied Physics, Part 1,Vol. 47, No. 1, pp. 35-42, 2008. |
| 75. | Jung-Hui Tsai and Chien-Ming Li, “Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs,” Solid-State Electron., Vol. 52, No.1, pp. 146-149, 2008. [SCI, EI] NSC 95-2221-E-017-013 |
| 76. | Jung-Hui Tsai, Der-Feng Guo, Yu-Chi Kang, and Tzu-Yen Weng, “Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT),” Physica Scripta, T129, pp. 293-296, 2007. [SCI, EI] NSC 95-2221-E-017-013 |
| 77. | Jung-Hui Tsai, Chien-Ming Li, Wen-Chau Liu, Der-Feng Guo, Shao-Yen Chiu, and Wen-Shiung Lour, “Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs,” Electron. Lett., Vol. 43, No. 13, pp.732-734, 2007. [SCI, EI] NSC 95-2221-E-017-013 |
| 78. | Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng, and Chien-Ming Li, “Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure,” Microelectronics Journal, Vol. 38, No. 6-7 pp. 750-753,2007. [SCI, EI] NSC 95-2221-E-017-013 |
| 79. | Wei-Tien Chen, Hon-Rung Chen, Shao-Yen Chiu, Meng-Kai Hsu, Jung-Hui Tsai, and Wen-Shiung Lour, “Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment,” J. Electrochemical Society, Vol.154, No. 7, pp. 552-556, 2007. [SCI, EI] |
| 80. | Tzu-Pin Chen, Ssu-I Fu, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour, and Wen-Chau Liu, “Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors,”J. Appl. Phys.,Vol. 101, pp. 034501-1-034501-5, 2007. [SCI, EI] |
| 81. | Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour and Wen-Chau Liu, “Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector,” J. Electrochemical Society, Vol.154, No. 1, pp. H13-H15, 2007. [SCI, EI] |
| 82. | Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau Liu, “Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors,” J. Electrochemical Society, Vol. 154, pp. H283-H288, 2007. [SCI, EI] |
| 83. | Tzu-Pin Chen, Ssu-I Fu, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, and Wen-Chau Liu, “Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure,” Electrochem. Solid-State Lett., Vol. 10, No. 2, pp. H56-H58, 2007. [SCI, EI] |
| 84. | Meng-Kai Hsu, Hon-Rung Chen, Shao-Yen Chiu, Wei-Tien Chen, Wen-Chau Liu, Jung-Hui Tsai, and Wen-Shiung Lour, “Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate,” Semiconductor Science and Technology, Vol. 22, No. 2, pp. 35-42, 2007. [SCI, EI] |
| 85. | Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, “Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions,” Materials Chemistry and Physics, Vol. 100, No. 2-3, pp. 340-344, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
| 86. | Chun-Wei Chen, Po-Hsien Lai, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai and Wen-Chau Liu, ”Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT),” Semiconductor Science and Technology, Vol. 21, No. 9, pp. 1358-1363, 2006. [SCI, EI] |
| 87. | Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo, and Wen-Chau Liu, “Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage,” Semiconductor Science and Technology, Vol. 21, No. 8, pp. 1132-1138, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
| 88. | T. P. Chen, S. I. Fu, J. H. Tsai, W. S. Lour, D. F. Guo, S. Y. Cheng, and W. C. Liu, “Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor,” Semiconductor Science and Technology, Vol. 21, No. 12, pp. 1733-1737, 2006. [SCI, EI] |
| 89. | Jung-Hui Tsai and Yu-Chi Kang, “DC performance of InP/InGaAs pnp heterostructure-emitter bipolar transistor,” IEEE Trans. Electron Devices, Vol. 53, No. 5, pp. 1265-1268, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
| 90. | Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, “Investigation of InP/InGaAs pnp d-doped heterojunction bipolar transistor with extremely low offset voltage,” Solid-State Electron., Vol. 50, No. 3, pp. 468-472, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
| 91. | Jung-Hui Tsai, “A Novel GaAs field-effect transistor with double camel-like gate structure”, IEEE Electron Device Lett., Vol. 26, No. 7, pp. 429-431, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
| 92. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “High-performance InP/InGaAs pnp d-doped heterojunction bipolar transistor,” European Physical Journal Applied Physics, Vol. 30, No. 3, pp. 167-169, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
| 93. | Jung-Hui Tsai, Yu-Jui Chu, Jeng-Shyan Chen, and King-Poul Zhu, “Influence of d-doped sheet on DC performances of InP/InGaAs heterojunction bipolar transistors,” Superlattices & Microstructures, Vol. 37, No. 3, pp. 203-215, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
| 94. | Jung-Hui Tsai and Yu-Jui Chu, “Influence of spacer layer on InP/InGaAs d-doped heterojunction bipolar transistors,” Materials Chemistry and Physics, Vol. 91 No. 2-3, pp. 431-436, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
| 95. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application,” Solid-State Electron., Vol.49, No. 3, pp. 357-361, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
| 96. | Jung-Hui Tsai, Ying-Cheng Chu, Shao-Yen Chiu, King-Poul Zhu, Yu-Jui Chu, and Jeng-Shyan Chen, “Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch,” Semiconductor Science and Technology, Vol. 20, No. 2, pp. 152-157, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
| 97. | Jung-Hui Tsai, Jeng-Shyan Chen and Yu-Jui Chu, “Design consideration of δ-doping channels for high-performance n+-GaAs/p+-InGaP/n-GaAs camel-gate field effect transistors,” Superlattices & Microstructures, Vol. 37, No.1, pp. 9-17, 2005. [SCI, EI] NSC 92-2218-E-017-001 |
| 98. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches,” Materials Chemistry and Physics, Vol. 87, No. 2-3, pp. 435-438, 2004. [SCI, EI] NSC 93-2215-E-017-001 |
| 99. | Jung-Hui Tsai, King-Poul Zhu, Shao-Yen Chiu, and Ying-Cheng Chu, “High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure,” Journal of Vacuum Science and Technology B, Vol. 22, No. 5, pp. 2314-2318, 2004. [SCI, EI] NSC 93-2215-E-017-001 |
| 100. | Jung-Hui Tsai, “High-performance AlInAs/GaInAs d-doped HEMT with negative differential resistance switch for logic application”, Solid-State Electron., Vol. 48, No. 1, pp. 81-85, 2004. [SCI, EI] NSC 91-2215-E-017-001 |
| 101. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor,” Electron. Lett., Vol. 39, No. 22, pp. 1611- 1612, 2003. [SCI, EI] NSC 92-2218-E-017-001 |
| 102. | Jung-Hui Tsai and King-Poul Zhu, “Electrical Properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure,” Materials Chemistry and Physics, Vol. 82, No. 3, pp. 501-504, 2003. [SCI, EI] NSC 91-2215-E-017-001 |
| 103. | Jung-Hui Tsai, “High performances of InP/InGaAs heterojunction bipolar transistors with a d-doped sheet between two spacer layers,”Semiconductor Science and Technology, Vol. 18, No. 12, pp. 1010-1014, 2003. [SCI, EI] NSC 92-2218-E-017-001 |
| 104. | Jung-Hui Tsai, “Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature,” Appl. Phys. Lett., Vol. 83, No. 13, pp. 2695-2697, 2003. [SCI, EI] NSC 92-2218-E-017-001 |
| 105. | Jung-Hui Tsai, “A novel InGaP/InGaAs/GaAs double d-doped pHEMT with camel-like gate structure,” IEEE Electron Device Lett., Vol. 24, No. 1, pp. 1-3, 2003. [SCI, EI] NSC 91-2215-E-017-001 |
| 106. | Jung-Hui Tsai and King-Poul Zhu, “Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature,” Solid-State Electron., Vol. 47, No. 6, pp. 1055-1059, 2003. [SCI, EI] NSC 91-2215-E-017-001 |
| 107. | Jung-Hui Tsai, “Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor,” Solid-State Electron., Vol. 46, No. 1, pp. 45-48, 2002. [SCI, EI] NSC 90-2215-E-017-001 |
| 108. | Jung-Hui Tsai, “InGaP/GaAs camel-gate field effect transistor with double d-doping channel profiles,” Materials Chemistry and Physics, Vol. 73, No. 2-3, pp 170-173, 2002. [SCI, EI] NSC 89-2215-E-017-001 |
| 109. | Wen-Chau Liu, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Cheng-Zu Wu, Kuan-Po Lin, and Chih-Hung Yen, ”On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations,” IEEE Trans. Electron Devices, Vol. 48, No. 8, pp. 1522-1530, 2001. |
| 110. | Jung-Hui Tsai, “Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure,” Solid-State Electron., Vol. 45, No. 12, pp.2045-2049, 2001. [SCI, EI] NSC 89-2215-E-017-001 |
| 111. | Jung-Hui Tsai, “Quantizied resonant-tunneling phenomena of AlGaAs/GaAs/InGaAs heterojunction bipolar transistors,” Jpn. J. Appl. Phys., Vol. 40, No. 10, pp.5865-5870, 2001. [SCI, EI] NSC 90-2215-E-017-001 |
| 112. | Wang WC, His-Jen Pan, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Shiou-Ying Cheng, and Wen-Chau Liu, “Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures,” Superlattices & Microstructures, Nol. 29, No. 2, pp. 133-145, 2001. [SCI, EI] |
| 113. | Kuo-Hui Yu, Kun-Wei Lin, Chin-Chuan Cheng, Wen-Lung Chang, Jung-Hui Tsai, Shiou-Ying Cheng, and Wen-Chau Liu, “Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor,” Jpn. J. Appl. Phys., Vol. 40, No. 1, pp.24 -27, 2001. |
| 114. | Shiou-Ying Cheng, His-Jen Pan, Shun-Ching Feng, Kuo-Hui Yu, Jung-Hui Tsai, and Wen-Chau Liu, “A new wide voltage operation regime double heterojunction bipolar transistor,” Solid-State Electron., Vol. 44, No. 4, pp. 581-585, 2000. [SCI, EI] |
| 115. | Jung-Hui Tsai, “A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena,” Solid-State Electron., Vol. 44, No. 6, pp. 1049-1053, 2000. [SCI, EI] NSC 89-2215-E-270-003 |
| 116. | Jung-Hui Tsai, “Application of AlGaAs/GaAs/InGaAs heterostructure emitter for resonant tunneling transistor “, Appl. Phys. Lett., Vol. 75, No. 17, pp. 2668-2670, 1999. [SCI, EI] NSC 89-2215-E-270-003 |
| 117. | Jung-Hui Tsai, “Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well base,” Microelectronics Reliability, Vol. 39, No. 9, pp. 1379-1387, 1999. [SCI, EI] NSC 89-2215-E-270-003 |
| 118. | Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin, and Wen-Chau Liu, “Superlatticed negative differential-resistance heterojunction bipolar transistor,” J. Vac. Sci. & Technol. B, Vol. 17, No. 4, pp.1447-1481, 1999. [SCI, EI] |
| 119. | Shiou-Ying Cheng, Jung-Hui Tsai, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, and Wen-Chau Liu, “Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT),” Solid-State Electron., Vol. 43, No. 4, No. 1-2, pp. 755-760, 1999. [SCI, EI] |
| 120. | Jung-Hui Tsai, Shiou-Ying Cheng, Hui-Jung Shih, and Wen-Chau Liu, “Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure,” superlattices & Microstructures, Vol. 24, N0.3, pp.189-195, 1998. [SCI, EI] |
| 121. | Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, Wen-Chau Liu, and Hao-Hsiung Lin, “An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT),” superlattices & Microstructures, Vol. 23, No.6, pp.1297-1307, 1998. [SCI, EI] |
| 122. | Po-Hung Lin, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, Wen-Chau Liu, and Jung-Hui Tsai, “Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)”, Materials Chemistry and Physics, Vol. 57, No. 1, pp. 77-80, 1998. [SCI] |
| 123. | Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, and W. L. Chang, “ Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT’s),” Thin solid film, Vol.324, pp.219-224, 1998. [SCI, EI] |
| 124. | Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu, Shiou-Ying Cheng, and Wen-Chau Liu, “Investigation of step-doped channel heterostructure field-effect transistor,” IEE Proceedings-Circuits, Devices and Systems, Vol. 144, No. 5, pp. 309-312, 1997. [SCI, EI] |
| 125. | Jung-Hui Tsai, Wen-Shiung Lour, Hui-Jung Shih, Wen-Chau Liu and Hao-Hsiung Lin, “Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors,” Semiconductor Science and Technology, Vol. 12, No. 9, pp. 1135-1139, 1997. [SCI, EI] |
| 126. | Wen-Chau Liu, Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin, Jing-Yuh Chen, and, Wei-Chou Wang, “InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT),” IEEE Electron Device Lett., Vol. 18, No. 11, pp. 515-517, 1997. [SCI, EI] |
| 127. | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kun-Wei Lin, and Chin-Chuan Cheng, “InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE,” J. Crystal Growth, Vol. 170, No. 4, pp. 438-441, 1997. [SCI, EI] |
| 128. | Wen-Chau Liu, Lih-Wen Laih, Cheng-Zu Wu, Shiou-Ying Cheng, and Jung-Hui Tsai, “Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications,” IEEE Electron Device Lett., Vol. 18, Vol. 4, pp. 129-131, 1997. [SCI, EI] |
| 129. | Jung-Hui Tsai, Huey-Ing Chen, and Wen-Chau Liu, “Heterostructure-Emitter and Pseudomorphic Base Transistor (HEPBT) with a Graded AlxGa1-xAsConfinement Layer,” Materials Chemistry and Physics, Vol. 51, No. 2, pp. 114-116, 1997. [SCI, EI] |
| 130. | Jung-Hui Tsai, Hui-Jung Shih, Shiou-Ying Cheng, and Wen-Chau Liu, “Regenerative switching phenomenon of a graded-AlxGa1-xAs/InGaAs/GaAs heterostructure,” Thin solid film, Vol. 304, pp. 201-203, 1997. [SCI, EI] |
| 131. | Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, and Shiou-Ying Cheng, “Multiple quantized switching behaviors (MQSB) of functional heterostructure-emitter bipolar transistors (HEBT’s) with multiple carrier confinement heterostructures,” Semiconductor Science and Technology, Vol. 12, pp. 614-622, 1997. [SCI, EI] |
| 132. | Jung-Hui Tsai, Shiou-Ying Cheng, Po-Hung Lin, Wei-Chou Wang, Jing-Yuh Chen, and Wen-Chau Liu, “Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBT’s),” Solid-State Electron., Vol. 41, No. 8, pp. 1089-1094, 1997. [SCI, EI] |
| 133. | Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Kong-Beng Thei and Cheng-Zu Wu, “A new InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application,” IEEE Trans. Electron Devices, Vol. 44, No. 4, pp. 520-525, 1997. [SCI, EI] |
| 134. | Chin-Chuan Cheng, Jung-Hui Tsai, and Wen-Chau Liu, “Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure Transistors,” Jpn. J. Appl. Phys. Vol. 36, No.3A, pp. 980-983, 1997. [SCI, EI] |
| 135. | Jung-Hui Tsai, Lih-Wen Laih, Hui-Jung Shih, Wen-Chau Liu, and Hao-Hsiung Lin, “On the recombination currents effect of heterostructure-emitter bipolar transistors,” Solid-State Electron., Vol. 39, No. 12, pp. 1723-1730, 1996. [SCI, EI] |
| 136. | Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, and Wen-Chau Liu, “AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT),” Electron. Lett., Vol. 32, No. 18, pp. 1720-1722, 1996. [SCI, EI] |
| 137. | Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, “Device linearity improvement and current enhancement utilizing high-to-low doped-channel FET’s,” superlattices & Microstructures, Vol. 20, No. 1, pp. 15-23, 1996. [SCI, EI] |
研討會論文(Click)
| 項次 | 論文 |
| 1. | Jung-Hui Tsai*, Pao-Sheng Lin, and Wen-Chau Liu, “Fabrication of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors,” Asian Conference on Engineering and Natural Sciences, Osaka, Japan, p.95, 2018. |
| 2. | Jung-Hui Tsai, Yi-Chen Wu, Syuan-Hao Liou, Pao-Sheng Lin, and Te-Kuang Chiang, “InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity,” International Conference on Microelectronics and Plasma Technology (ICMAP 2016), p. TP-34, Gyeongju, Korea, 2016. |
| 3. | Jung-Hui Tsai, Pao-Sheng Lin, Yi-Chen Wu, Syuan-Hao Liou, and Te-Kuang Chiang, “Performance of Al0.2Ga0.3In0.5P/In0.15Ga0.85As complementary co-integrated pseudomorphic doping-channel field-effect transistors,” International Conference on Microelectronics and Plasma Technology (ICMAP 2016), p. TP-35, Gyeongju, Korea, 2016. |
| 4. | Yi-Ting Chao and Jung-Hui Tsai, “On the indium mole fraction distribution of InGaP/InGaAs pseudomophic triple doping-channel field-effect transistors,” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), pp. 12P-7-29, Toyama, Japan, 2015. |
| 5. | Jung-Hui Tsai, Chung-Cheng Chiang, and Fu-Min Wang, “High-Performance AlGaN/AlN/GaN High Electron Mobility Transistor with Broad Gate-to-Source Operation Voltages,” 19th International Conferenceon Ternary and Multinary Compounds, p. 110, Niigata, Japan, 2014. |
| 6. | Jung-Hui Tsai, “Performance of Al0.2Ga0.3In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs triple heterostructure-emitter heterojunction bipolar transistor,” International Conference on Microelectronics and Plasma Technology, p. MP-ND-Tu-PS-28, Gunsan, Korea, 2014. |
| 7. | Jung-Hui Tsai, Chia-Hong Huang, and Fu-Min Wang, “Investigation of AlGaInP/InGaAs pseudomorphic double doping-channel field effect transistors,” International Conference on Microelectronics and Plasma Technology, p. MP-ND-Tu-PS-29, Gunsan, Korea, 2014. |
| 8. | Jung-Hui Tsai, “Characteristics of InGaP/InGaAs field-effect transistor typed hydrogen sensor with Pd nanoparticle catalytic metal,” 26th International Microprocesses and Nanotechnology Conference (MNC 2013), pp. 7P-7-33, Sapporo, Japan, 2013. |
| 9. | Jung-Hui Tsai, Chung-Cheng Chiang, Yi-Ting Chao, and You-Ren Wu,“Heterostructure-Emitter Bipolar Transistor with InGaP/GaAs Superlattice-Emitter Structure,”The 13th International Workshop on Junction Technology (IWJT), pp.14-15, Kyoto, Japan, 2013. [EI] |
| 10. | Jung-Hui Tsai, Yi-Ting Chao, Chung-Cheng Chiang, You-Ren Wu, Ning-Feng Dale, and Yuan-Hong Lee, “Application of p+-InGaP/n+-GaAs/i-InGaAs Camel-Like Gate for Delta-Doped p-Channel Field-Effect Transistor,”The 13th International Workshop on Junction Technology (IWJT), pp.11-13, Kyoto, Japan, 2013. [EI] |
| 11. | Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, and Sheng-Shiun Ye,“Investigation of an InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor with High Current Gain and Low Offset Voltage,”accepted, 2012 International Workshop on Information and Electronics Engineering (IWIEE 2012), Harbin, China, 2012. |
| 12. | Jung-Hui Tsai, Wen-Shiung Lour ,Jhih-Jhong Ou-Yang, and Jia-Cing Jhou,“High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode,”2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2011), S-113P, Tianjin, China, 2012. |
| 13. | Jung-Hui Tsai*, Jia-Cing Jhou, and Jhih-Jhong Ou-Yang,“Investigation of InGaP/InGaAs Pseudomorphic Triple Doped-Channel Field-Effect Transistors,”2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2011), S-71P, Tianjin, China, 2012. |
| 14. | Jung-Hui Tsai, Sheng-Shiun Ye, Yung-Chun Ma, Jia-Cing Jhou, and Jhih-Jhong Ou-Yang,“An InP/InGaAs metamorphic d-doped heterojunction bipolar transistor with high current gain and low offset voltage,”The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP-2011), pp.65-66, Dalian, China. |
| 15. | Jung-Hui Tsai, Jhih-Jhong Ou-Yang, and Jia-Cing Jhou,“High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode,”The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP-2011), p. 94, Dalian, China. |
| 16. | Jung-Hui Tsai*, Chia-Hong Huang, Der-Feng Guo, Wen-Shiung Lour, Yung-Chun Ma, Sheng-Shiun Ye, Jia-Cing Jhou, Jhih-Jhong Ou-Yang, and You-Ren Wu,“High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor,”“The International Electron Devices and Materials Symposium (IEDMS 2011), P-C-25, Taipei, Taiwan, 2011. |
| 17. | Jung-Hui Tsai, Sheng-Shiun Ye, Yung-Chun Ma, Jhih-Jhong Ou-Yang, and Jia-Cing Jhou,“Investigation of InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles,”2011 9th Conference on Microelectronics Technology & Applications (2011 C’META),pp.8-12, Kaohsiung, Taiwan, 2011. |
| 18. | Jung-Hui Tsai, Der-Feng Guo, Yuan-Hong Lee, Ying-Feng Dai, and Wen-Shiung Lour, “InGaP/GaAs/InGaAs doped-Channel field-Effect transistor using camel-Like gate structure,” 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT2010), pp. 1476 – 1479, Chengdu, China, 2010. |
| 19. | Jung-Hui Tsai, Der-Feng Guo, Yuan-Hong Lee, Ying-Feng Dai, and Wen-Shiung Lour, “InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure,” 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT2010), pp. 1480-1482, Chengdu, China, 2010. |
| 20. | Jung-Hui Tsai and Der-Feng Guo, “High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT),” Conference on Avionics, pp. p34, Kaohsiung, Taiwan, 2010. |
| 21. | Der-Feng Guo and Jung-Hui Tsai, “Investigation in heterostructural optoelectronic devices,” Conference on Avionics, pp. p35, Kaohsiung, Taiwan, 2010. |
| 22. | Der-Feng Guo, Wen-Chau Liu, and Jung-Hui Tsai, “An optoelectronic switch,” IEEE International Vacuum Electronics Conference (IVEC’09), pp. 395-396, Rome, Italy, 2009. [EI] |
| 23. | Yi-Jung Liu, Tsung-Yuan Tsai, Jung-Hui Tsai, Wen-Shiung Lour, Chi-Hsiang Hsu, Tai-You Chen, Chien-Chang Huang, and Wen-Chau Liu, “Low-damage GaN-based light-emitting diodes with KOH treatment,” IEDMS’2009 (Symposium D), Taoyuag, 2009. |
| 24. | Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Chien-Ming Li, and Yuan-Hong Lee, “InGaP/InGaAs doped-channel heterostructure field-effect transistors s for complementary logic inverter application,” 3rd International Meeting on Developments in Materials, Processes and Applications of Emerging Technologies, Manchester, United Kingdom, 2009. |
| 25. | Jung-Hui Tsai, Der-Feng Guo, Ning-Xing Su, Yin-Shan Huang, and Wen-Chau Liu, “High device linearity of pseudomorphic doped-channel field-effect transistor using InGaP/GaAs/InGaAs camel-like gate heterostructure,” The International Conference on Nanophotonics 2009, p.179, Harbin, China, 2009. |
| 26. | Tsung-Hun Tsai, Chung-Fu Chang, Huey-Ing Chen, Kun-Wei Lin, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, “SiO2-passivation based hydrogen gas detector,” The International Conference on Nanophotonics 2009, p.182, Harbin, China, 2009. |
| 27. | Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Jung-Hui Tsai, Kun-Wei Lin, and Wen-Chau Liu, “On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector,” The International Conference on Nanophotonics 2009, pp.183-184, Harbin, China, 2009. |
| 28. | Li-Yang Chen, Chien-Chang Huang, Shiou-Ying Cheng, Jung-Hui Tsai, Kun-Wei Lin, and Wen-Chau Liu, “High performance heterostructure transistor with graded -doped sheets,” The International Conference on Nanophotonics 2009, pp.185-186, Harbin, China, 2009. |
| 29. | Shao-Yen Chiu, Chung-Hsien Wu, Jung-Hui Tsai, and Wen-Shiung Lour, “Investigation on electro-optical switch using heterojunction phototransistors with double emitter ,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2008) pp. 75-77, 2008 . [EI] |
| 30. | Meng-Kai Hsu, Shao-Yen Chiu, Chung-Hsien Wu, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, “Investigation of field-plate gate on heterojunction doped-channel field effect transistors ,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2008) pp. 105-107, 2008 . [EI] |
| 31. | Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Chien-Ming Li, Yi-Zhen Wu, Ning-Xing Su, and Yin-Shan Huang, “InGaP/GaAs pnp heterojunction bipolar transistor with d-doped sheet between base-emitter junction,” International conference on multi-functional materials and structures, Vol.47-50, pp. 383-386, Hong Kong, 2008. [EI] |
| 32. | Meng-Kai Hsu, Jung-Hui Tsai, Shao-Yen Chiu, Chung-Hsien Wu, Kum-Chieh Liang, Kang-Ping Liu, Tze-Shuan Huang, and Wen-Shiung Lour,“Application of Schottky bulk-layer design on double-heterojunction pseudomorphic AlGaAs/InGaAs/AlGaAs high electron mobility transistors (DH-HEMTs),” International conference on multi-functional materials and structures,Vol.47-50, pp. 416-422, 2008. [EI] |
| 33. | Kuei-Yi Chu, Shiou-Ying Cheng, Tzu-Pin Chen, Li-Yang Chen, Tsung-Han Tsai, Jung-Hui Tsai, and Wen-Chau Liu, “Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors,” The 8th International Workshop on Junction Technology (IWJC), pp.176-178, Shanghai, China, 2008. [EI] |
| 34. | T. P. Chen, W. H. Chen, K. Y. Chu, L. Y. Chen, C. J. Lee, S. Y. Cheng, J. H. Tsai, and W. C. Liu, “Investigation of InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure,” 2008 International Workshop on Junction Technology (IWJT2008), Shanghai, pp. 168-171, 2008. [EI] |
| 35. | L. Y. Chen, S. Y. Cheng, K. Y. Chu, J. H. Tsai, T. P. Chen, T. H. Tsai, and W. C. Liu, “Improved formal passivations of Pseudomorphic high electron mobility transistors,” 2008 International Workshop on Junction Technology (IWJT2008), Shanghai, pp. 183-186, 2008. [EI] |
| 36. | Der-Feng Guo, Jung-Hui Tsai, Chien-Ming Li, “A pnpn GaAs-InGaAs optoelectronic switch,” Proc. 2007 International Conference on Microelectronics, pp.446-448, Cairo, Egypt, Dec. 29-31, 2007. |
| 37. | Der-Feng Guo, Jung-Hui Tsai, and Tzu-Yen Weng, “An Optoelectronic Switch with Multiple Operation States,” IEEE 19th International Conference onIndium Phosphide & Related Materials (IPRM '07), pp. 252-255, 2007. [EI] |
| 38. | Yan-Ying Tsai, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Huey-Ing Chen, and Wen-Chau Liu, “A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor,”International Solid-State Sensors, Actuators and Microsystems Conference TRANSDUCERS, pp. 2047-2050, 2007. [EI] |
| 39. | C. W. Hung, H. I. Chen, D. F. Guo, J. H. Tsai, S. Y. Cheng, Y. Y. Tsai, T. P. Chen, and W. C. Liu, “Hydrogen Sensing Characteristics of a Pd/GaAs Semiconductor Transistor-Type Sensor,” “International Solid-State Sensors, Actuators and Microsystems Conference TRANSDUCERS, pp. 2043-2046, 2007. [EI] |
| 40. | Jung-Hui Tsai, Der-Feng Guo, and Ming-Yue Fu, “Optoelectronic switch with S-shaped negative differential resistance,” Proc. Optoelectronics and Communications Conference (OECC)/International Conference on Integrated Optics and Optical Fiber Communication (IOOC), pp. 758-759, Kanagawa, Japan, 2007. |
| 41. | Der-Feng Guo, Jung-Hui Tsai, and Ming-Yue Fu, “A multiple-operation-state optoelectronic switch,” Proc. Optoelectronics and Communications Conference (OECC)/International Conference on Integrated Optics and Optical Fiber Communication (IOOC), pp. 506-507, Kanagawa, Japan, 2007. |
| 42. | Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng, Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung, and Wen-Chau Liu, “Investigation on heterostructural optoelectronic switches,” 2nd International Symposium on Functional Materials (ISFM-2007), p. 77, Hangzhou, China, 2007. [EI] |
| 43. | Ssu-Yi Fu, Tzu-Pin Chen, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, “Improved performance of a composite passivate heterojunction bipolar transistor (HBT),” 2nd International Symposium on Functional Materials (ISFM-2007), p. 93, Hangzhou, China, 2007. [EI] |
| 44. | Po-Hsien Lai, Yi-Wen Huang, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, “Sulphur passivation on an InGaP/InGaAs/GaAs Pseudomorphic high electron mobility transistor (PHEMT),” 2nd International Symposium on Functional Materials (ISFM-2007), p. 93, Hangzhou, China, 2007. [EI] |
| 45. | Jung-Hui Tsai, Der-Feng Guo, Yu-Chi Kang, and Tzu-Yen Weng, “Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT),” 2nd International Symposium on Functional Materials (ISFM-2007), p. 94, Hangzhou, China, 2007. [EI] |
| 46. | Jung-Hui Tsai, Der-Feng Guo, Tzu-Yen Weng, and Ching-Han Wu, “Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 141-143, Perth, Australia, 2006. [EI] |
| 47. | Jung-Hui Tsai, Der-Feng Guo, Tzu-Yen Weng, Yu-Chi Kang, Ching-Han Wu, and I-Hsuan Hsu, “An improved InP/InGaAs pnp HBT with d-doped sheet between emitter-base junction,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 144-147, Perth, Australia, 2006. [EI] |
| 48. | Tzu-Yen Weng, Jung-Hui Tsai, and Der-Feng Guo, “An optoelectronic switch with multiple operation states,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 90-93, Perth, Australia, 2006. [EI] |
| 49. | Tzu-Yen Weng, Jung-Hui Tsai, and Der-Feng Guo, “An AlGaAs/GaAs/InAlGaP optoelectronic switch,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 94-97, Perth, Australia, 2006. [EI] |
| 50. | Jung-Hui Tsai, “An InGaP/GaAs/InGaAs heterojunction bipolar transistor with step-emitter structure,” Journal of Kaohsiung Normal University, Vol. 21, pp. 37-54, 2006. |
| 51. | Jung-Hui Tsai, “Multiple negative differential resistances of InP/InGaAs resonant tunneling diode with split miniband structures,” Journal of Kaohsiung Normal University, Vol. 21, pp. 55-66, 2006. |
| 52. | Jung-Hui Tsai, Tzu-Yen Weng, Yu-Chi Kang, Ching-Han Wu, I-Hsuan Hsu, and Wen-Chau Liu, “An InP/InGaAs pnp heterostructure-emitter bipolar transistor with high current gain and low offset voltage,” International Electronics Devices and Materials Symposia (IEDMS 2006), pp.119-120, Tainan, Taiwan, 2006. |
| 53. | Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng,“Investigation of InP/InGaAs pnp Heterostructure-Emitter Bipolar Transistor,”ECS Trans., vol. 2, No. 5, p. 223, 2006. |
| 54. | P. H. Lai, J. H. Tsai, S. I. Fu, Y. Y. Tsai, C. W. Hung, and W. C. Liu, “Characteristics of a heterostructure field-effect transistor (HFET) with sulfur passivation on gate surface,” International conference on processing & manufacturing of advanced materials (THERMEC’2006), pp. 481, Vancouver, Canada, 2006. |
| 55. | Shao-Yen Chiu, Wen-Shiung Lour, Jung-Hui Tsai, and Yu-Chi Kang, “High-performance InGaP/GaAs pnp d-doped heterojunction bipolar transistor,”The 6th International Workshop on Junction Technology (IWJC), pp.280-282, Shanghai, China, 2006. [EI] |
| 56. | Jung-Hui Tsai, Yu-Chi Kang, Tzu-Yen Weng, and I-Hsuan Hsu, “Fabrication and Performance of GaAs Double Camel-Like Gate FET with Extremely High Gate Turn-on Voltage,” The 6th International Workshop on Junction Technology (IWJC), pp.287-290, Shanghai, China, 2006. [EI] |
| 57. | Jung-Hui Tsai, Ssu-I Fu, Po-Hsien Lai, Yan-Ying Tsai, Ching-Wen Hung, and Wen-Chau Liu, “Performance improvement of an InGaP/GaAs heterojunction bipolar transistor (HBT) with surface sulfur treatments,” International Conference on Processing & Manufacturing of Advanced Materials, Vancouver, Canada, 2006. |
| 58. | Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, “High-performance InP/InGaAs pnp heterostructure-emitter bipolar transistor,” Electronics Devices and Materials Symposia (EDMS), p. 57, Kaohsiung, Taiwan, 2005. |
| 59. | Yan-Ying Tsai, Jung-Hui Tsai, Hon-Rung, Wei-His Hsu, Po-Hsien Lai, Ssu-I Fu, and Wen-Chau Liu, “Hydrogen sensing responses of a Pt-InAlP metal-oxide-semiconductor (MOS) diode,” The 6th East Asian Conference on Chemical Sensors (EACCS-6), Guilin, China, 2005. |
| 60. | Jung-Hui Tsai and Yu-Chi Kang, “Extremely high gate turn-on voltage of GaAs double camel-like gate field-effect transistor,” European Gallium Arsenide and other Compound Semiconductors Application Symposium, pp. 169-172, France, 2005. [EI] |
| 61. | Jung-Hui Tsai, Yu-Chi Kang, and Wen-Shiung Lour, “InP/InGaAs resonant tunneling diode with six-route negative differential resistances,” European Gallium Arsenide and other Compound Semiconductors Application Symposium, pp. 421-423, France, 2005. [EI] |
| 62. | Jung-Hui Tsai, Yu-Jui Chu, Jeng-Shyan Chen, and King-Poul Zhu, “Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches,” 7th International Conference on Solid-State and Integrated Circuits Technology, vol. 3, pp. 2305-2308, Beijing, China, 2004. [EI] |
| 63. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor,” Proceedings of the 34th European Solid-State Device Research Conference, ESSCIRC2004, pp. 437-440, 2004 [EI] |
| 64. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “On the multiple-state switches of an InGaP/GaAs double heterostructure-emitter bipolar transistor,” Electrochemical Society, v 2, State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, pp. 133-136, 2004 [EI] |
| 65. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD,” The 5th International Vacuum Electron Sources Conference, Sept. pp.368-370, Beijing, China, 2004. [EI] |
| 66. | Jung-Hui Tsai, Ying-Cheng Chu, King-Poul Zhu, and Shao-Yen Chiu, “Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD,” The 5th International Vacuum Electron Sources Conference, Sept. p.371, Beijing, China, 2004. [EI] |
| 67. | Jung-Hui Tsai, King-Poul Zhu, Shih-Wei Tan, and Wen-Shiung Lour, “On the negative differential resistance of AlInAs/GaInAs delta-doped HEMT for logic application,” The Sixteenth International Conference on Indium Phosphide and Related Materials (IPRM), pp. 209-212, Kagoshima, Japan, 2004. [EI] |
| 68. | Jung-Hui Tsai, Shao-Yen Chiu, Ying-Cheng Chu, and King-Poul Zhu, “A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor,” The 4th International Workshop on Junction Technology (IWJC), pp.224-227, Shanghai, China, 2004. [EI] |
| 69. | Jung-Hui Tsai, Shao-Yen Chiu, Ying-Cheng Chu, and King-Poul Zhu, “Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor,” The 4th International Workshop on Junction Technology (IWJC), pp.217-219, Shanghai, China, 2004. [EI] |
| 70. | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, “Investigation of InP/InGaAs superlattice-emitter heterojunction bipolar transistor (HBT),” Electronics Devices and Materials Symposia (EDMS), pp. 367-369, Keelung, Taiwan, 2003. |
| 71. | Jung-Hui Tsai, Ying-Cheng Chu, Shao-Yen Chiu and King-Poul Zhu, “Multiple negative differential resistance of superlattice-emitter resonant tunneling bipolar transistor by high-field domain,” Electronics Devices and Materials Symposia (EDMS), pp. 561-564, Keelung, Taiwan, 2003. |
| 72. | Jung-Hui Tsai, Yu-Jui Chu and Jeng-Shyan Chen, “InP/GaInAs d-doped heterojunction bipolar transistors with high current gain, low offset voltage,” Electronics Devices and Materials Symposia (EDMS), pp. 299-302, Keelung, Taiwan, 2003. |
| 73. | Jung-Hui Tsai, Jeng-Shyan Chen and Yu-Jui Chu, “A modeling approach to high-performance InGaP/GaAs camel-gate δ-doping field effect transistors,” Electronics Devices and Materials Symposia (EDMS), pp. 425-428, Keelung, Taiwan, 2003. |
| 74. | Jung-Hui Tsai and King-Poul Zhu, “High-performance InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor,” Proc. Military Symposium on Fundamental Science, EEB.101-106,Kaohsiung, Taiwan, ROC, 2003. |
| 75. | Wen-Chau Liu, Jung-Hui Tsai, Wen-Lung Chang, Kuo-Hui Yu, and Kun-Wei Lin, “High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations,” Knowledge Bridge, no. 25, pp. 2, 2002. |
| 76. | Jung-Hui Tsai, Ming-Jui Lin and King-Poul Ge, “InGaP/InGaAs/GaAs single d-doped pseudomorphic high electron mobility transistor with high barrier camel gate,” International Electronics Devices and Materials Symposia (IEDMS 2002), pp.148-150, Taipei, Taiwan, 2002. |
| 77. | Jung-Hui Tsai, King-Poul Ge, and Ming-Jui Lin, “A New InP/InGaAs d-doped heterojunction bipolar transistor,” International Electronics Devices and Materials Symposia (IEDMS 2002), pp.60-62, Taipei, Taiwan, 2002. |
| 78. | Jung-Hui Tsai, “Performance of InGaP/InGaAs/GaAs camel-gate single d-doping pHEMT,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2002), pp. 369-372, Sydeny, Australia. |
| 79. | Jung-Hui Tsai, “Integrated fabrication of InGaP/GaAs d-doped Heterojunction bipolar transistor and doped-channel field effect transistor,” Conference on optoelectronic and microelectronic materials and devices (COMMAD 2002), pp. 365-368, Sydeny, Australia. |
| 80. | Jung-Hui Tsai and Jeng-Shyan Chen “High-Linearity InGaP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) with Camel-Gate Structure”, 26th International Conference on the Physics of Semiconductors, Scotland, UK, 2002. |
| 81. | Jung-Hui Tsai, Jeng-Shyan Chen, and Yu-Jui Chu, “d-Doping Field-Effect Transistors with an InGaP/GaAs Camel-Gate Structures”, Proc. Military Symposium on Fundamental Science, CP.32-35,Kaohsiung, Taiwan, ROC, 2002. |
| 82. | Jung-Hui Tsai, “Perfromances of InGaP/GaAs Camel-Gate Field Effect Transistor with Double d-Doping Channels,” Electronics Devices and Materials Symposia (EDMS), pp.496-499, Kaoshiung, Taiwan, 2001. |
| 83. | Jung-Hui Tsai, “Co-Integration of d-Doped Heterojunction Bipolar Transistor and Doped-Channel Field Effect Transistor,” Electronics Devices and Materials Symposia (EDMS), pp.492-495, Kaoshiung, Taiwan, 2001. |
| 84. | Jung-Hui Tsai, “High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing d-Doping Channels, International Conference on Solid State Device and Materials (SSDM2000). |
| 85. | Jung-Hui Tsai, “High-Performance InGaP/GaAs Camel-Gate Transistor with d-Doping Sheets,” Symposium on Nano Device Technology, pp. 52-55, Taiwan, Hsinchu, 2000. |
| 86. | Jung-Hui Tsai, “Quantized Behaviors of AlGaAs/GaAs/InGaAs Heterojunction Bipolar Transistors (HBT’s),” Symposium on Nano Device Technology, pp.251-254, Taiwan, Hsinchu, 2000. |
| 87. | Jung-Hui Tsai, “Investigation of AlGaAs/GaAs/InGaAs Resonant-Tunneling Base Transistor (RTBT),” 12 th International Conference on Ternary and Multinary Compounds (ICTMC-12), P2-75, Taiwan, Hsinchu, 2000. |
| 88. | Jung-Hui Tsai, “On the Temperature dependence of InGaP/GaAs Heterostructure-Emitter Bipolar Transistor,” 3 th International Conference on Low Dimensional Structures and Devices (LDSD’99), Antalya, Turkey. |
| 89. | Jung-Hui Tsai, “A New AlGaAs/GaAs/InGaAs Pseudomorphic Heterostructure with Multiple S-shaped Switching Phenomena”, 3 th International Conference on Low Dimensional Structures and Devices (LDSD’99), Antalya, Turkey. |
| 90. | Jung-Hui Tsai, “Recombination Current Effect of Heterostructure-Emitter Bipolar Transistors (HEBT’s)”, 第十四屆技職研討會, pp. 331-339, Tainan, ROC, 1999. |
| 91. | Jung-Hui Tsai, “Investigation of Resonant Tunneling Bipolar Transistor with Bi-directional Negative-Differential-Resistance Phenomena”, Proc. Military Symposium on Fundamental Science, Kaohsiung, Taiwan, ROC, 1999. |
| 92. | Jung-Hui Tsai, “Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic Quantum-Well Base”, Proc. Military Symposium on Fundamental Science, Kaohsiung, Taiwan, ROC, 1999. |
| 93. | Jung-Hui Tsai, “Surface Recombination Effect in GaAs-Based Heterostructure-Emitter and Heterostructure-Base Transistors (HEHBT’s) ”, 34th Intersociety Energy Conversion Engineering Conference, Vancouver, British Columbia, 1999. |
| 94. | Jung-Hui Tsai, “High Breakdown-Voltage and high-linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels”, 34th Intersociety Energy Conversion Engineering Conference, Vancouver, British Columbia, 1999. |
| 95. | Jung-Hui Tsai, “Evaluations of AlInAs/GaInAs Heterostructure-Emitter-Confinement Bipolar Transistors”, 8th international symposium on passivity of metal and semiconductors, Jasper, Alberta, Canada, 1999. |
| 96. | Jung-Hui Tsai, “AlGaAs/GaAs/InGaAs Resonant Tunneling Bipolar Transistor with Untrathin Base Layer”, Conference on optoelectronic and microelectronic Materials and devices (COMMAD’98), Perth, Australia. [EI] |
| 97. | Jung-Hui Tsai, “Temperature dependence of InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT)”, Conference on optoelectronic and microelectronic Materials and devices (COMMAD’98), Perth, Australia. [EI] |
| 98. | Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Jing-Yuh Chen, Po-Hung Lin, and, Wei-Chou Wang, “Multiple-State Switching (MSS) Phenomenon of AlGaAs/InGaAs/GaAs Hetrostructure”, Electronics Devices and Materials Symposia (EDMS’97), pp.471-474, Taiwan. |
| 99. | Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, and Jing-Yuh Chen, “ A Novel Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT), Europen Solid-State Research Conference (ESSDERC’97), Stuttgart, Germany. [EI] |
| 100. | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kun-Wei Lin, and Chin-Chuan Cheng, “InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE,” (ICMOVPE VIII’96), OCSP.8, Cardiff, Wales, UK. |
| 101. | Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, Jing-Yuh Chen, “Multiple Negative-Differential-Resistance (MNDR) of a Graded-AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs Base Structure,” (SOTAPOCS’97), pp. 263-268, Canada, Montreal. |
| 102. | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Jing-Yuh Chen, Wei-Chou Wang, and Po-Hung Lin, “Investigation of step doped channel heterostructure field-effect transistor,” Conference on optoelectronic and microelectronic Materials and devices (COMMAD’96), PSM-47, Canberra, Australia. |
| 103. | Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, H. R. Chen, Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, and Jing-Yuh Chen, “A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter bipolar transistors (HEHBT’s),” Conference on optoelectronic and microelectronic materials and devices (COMMAD’96), PSM-46, Canberra, Australia. [EI] |
| 104. | Wen-Chau Liu, Jung-Hui Tsai, H. R. Chen, Lih-Wen Laih, and Shiou-Ying Cheng, “On the recombination currents effect of heterostructure-emitter bipolar transistors,” Conference on optoelectronic and microelectronic and devices (COMMAD’96), PSM-45, Canberra, Australia. [EI] |
| 105. | Wen-Chau Liu, Kong-Beng Thei, Jung-Hui Tsai, Chin-Chuan Cheng, Kun-Wei Lin, Wen-Shiung Lour,and and H. R. Chen, “Characteristics of functional heterostructure-emitter bipolar transistors (HEBT’s),” IEEE International conference on semiconductor electronics (ICSE’96), Penang, Malaysia. |
| 106. | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Wen-Shiung Lour, and Kun-Wei Lin, and Chin-Chuan Cheng, “Metal-insultor-semiconductor (MIS)-like field-effect-transistor for power system application,” The International Association of Science and Technology for Development IASTED’96, pp.62-65, Banff, Alberta, Canada, 1996. |
| 107. | Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, and Kun-Wei Lin, and Chin-Chuan Cheng, “High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications,” The International Association of Science and Technology for Development IASTED’96, pp.58-61, Banff, Alberta, Canada, 1996. |
| 108. | Wen-Chau Liu, Jung-Hui Tsai, Kong-Beng Thei, Chin-Chuan Cheng, Kun-Wei Lin, and H. R. Chen, “Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD,” Europen Gallium Arsenide and Related III-V Compounds Applications Symposium GAAS’96, Paris, France, 1996. |
| 109. | Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, and H. R. Chen, 1996, “Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet,” Europen Gallium Arsenide and Related III-V Compounds Applications Symposium GAAS’96, Paris, France, 1996. |
| 110. | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Chin-Chuan Cheng, and Kun-Wei Lin,” A new multiple negative-differential-resistance (MNDR) device with AlGaAs/step-graded InxGa1-xAs quantum well/GaAs structure,” IEEE SIMC-9, Toulouse, France, April 29/May 3, 1996. |
| 111. | Wen-Chau Liu, Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, Chin-Chuan Cheng, and Kun-Wei Lin, “A new heterostructure-base bipolar transistor with multiple negative-differential-resistance,” IEEE SIMC-9, Toulouse, France, April 29/May 3, 1996. |
| 112. | Wen-Shiung Lour, Jung-Hui Tsai, and Wen-Chau Liu, 1996, ”A new InGaP/GaAs DHBT with delta-sheet and application to power transistors,” IEEE SIMC-9, Toulouse, France, April 29/May 3, 1996. |
| 113. | Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, and H. R. Chen, 1996, “ High-performance InGaP/GaAs single-heterojunction bipolar transistor by d-doped sheet,” CJMW’96, China-Japan Joint Meeting on Microwaves, Hefei, China. |
| 114. | Wen-Chau Liu, Jung-Hui Tsai, Kong-Beng Thei, Kun-Wei Lin, Chin-Chuan Cheng, and H. R. Chen, 1996, “On the InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with multiple S-shaped negative-differential-resistance,” CJMW’96, China-Japan Joint Meeting on Microwaves, Hefei, China. |
| 115. | Wen-Chau Liu, Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, Kong-Beng Thei, Cheng-Zu Wu, and Rong-Chau Liu, 1995 “MBE grown GaAs tri-step doping channel camel-gate FET,” Asia-Pacific Microwave Conference, pp.577-580, Kaist, Taejon, Korea. |
| 116. | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu, Kong-Beng Thei, Wen-Shiung Lour, and Rong-Chau Liu, 1995 “ Negative-differential-resistorance (NDR) field-effect transistor with n--GaAs/n+-InGaAs/i-GaAs doping-channel structure,” International Laser, Lightwave and Microwave Conference, pp.54-57, Shanghai, China. |
| 117. | Der-Feng Guo, Lih-Wen Laih, Jung-Hui Tsai, and Wen-Chau Liu, 1995 “Application of InGaAs-GaAs delta-doped quantum wells to bolk-barrier switching devices,” International Laser, Lightwave and Microwave Conference, pp.50-53, Shanghai, China. |
| 118. | Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Kong-Beng Thei, Cheng-Zu Wu, Wen-Shiung Lour, and Rong-Chau Liu, 1995 “Fabrication and analysis of camel-gate field-effect transistors (CAMFET’s) with active doping channel profiles,” pp.42-45, International Laser, Lightwave and Microwave Conference, Shanghai, China. |
| 119. | Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, 1995, “Linear and enhanced transconductance using high-medium-low doping channel,” 25th Europen Solid State Device Research Conference, pp.177-180, The Hague-the Nethlands. |
| 120. | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kong-Beng Thei, Cheng-Zu Wu, Wen-Shiung Lour, Yuan-Tzu and Rong-Chau Liu, 1995, “GaAs-InGaAs doping-channel negative-differential-resistance field-effect transistor (NDRFET),” IEEE TENCON’95 on Microelectronics and VLSI, pp.103-106, Hong Kong Convention & Exibition Centre, Hong Kong. |
| 121. | Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, 1995, “Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer,” IEEE TENCON’95 on Microelectronics and VLSI, pp.95-98, Hong Kong Convention & Exibition Centre, Hong Kong. |
| 122. | Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Kong-Beng Thei, Cheng-Zu Wu, Wen-Shiung Lour, Yuan-Tzu and Rong-Chau Liu, 1995, “GaAs tristep low-low doping channel field effect transistor,” IEEE TENCON’95 on Microelectronics and VLSI, pp.107-110, Hong Kong Convention & Exibition Centre, Hong Kong. |
研究計畫(Click)
| 計畫名稱 | 擔任工作 | 執行年月 | 補助機構 |
| 具有虛擬通道層之高品質化合物增強/空乏型與互補式場效元件研製及其應用(III) (MOST 108-2221-E-017 -006) |
主持人 | 2019/08至2020/07 | 科技部 |
| 具有虛擬通道層之高品質化合物增強/空乏型與互補式場效元件研製及其應用(II) (MOST 107-2221-E-017 -006) |
主持人 | 2018/08至2019/07 | 科技部 |
| 具有虛擬通道層之高品質化合物增強/空乏型與互補式場效元件研製及其應用 (MOST 106-2221-E-017 -011 -) |
主持人 | 2017/08至2018/07 | 科技部 |
| 新型磷銦鋁鎵/砷化銦鎵積體化異質結構場效電晶體及邏輯與氣體感測器應用之研究(II) (MOST 104-2221-E-017 -007 -MY2) |
主持人 | 2015/08至2017/07 | 科技部 |
| 新型磷銦鋁鎵/砷化銦鎵積體化異質結構場效電晶體及邏輯與氣體感測器應用之研究(I) (MOST 103-2221-E-017 -013 -) |
主持人 | 2014/08至2015/07 | 科技部 |
| 電阻式氫氣感測器之感測材料、特性、機制及電路 (大專生研究計畫) |
指導教授 | 2013/07至2014/02 | 國科會 |
| 高性能變晶性積體化電晶體之製造與研究 (NSC 101-2221-E-017-005-MY2) |
主持人 | 2012/08至2014/07 | 國科會 |
| 新型穿透式雙極性電晶體之研究 (NSC 101-2221-E-017-006-) |
主持人 | 2012/08至2013/07 | 國科會 |
| 具有奈米級多孔性感測金屬合層之半導體氫氣感測器研究(II)(NSC 100-2221-E-017-001-) | 主持人 | 2011/08至2012/07 | 國科會 |
| 具有奈米級多孔性感測金屬合層之半導體氫氣感測器研究(I) (99-2221-E-017-018-) | 主持人 | 2010/08至2011/07 | 國科會 |
| 具有超晶格基極結構之新式異質接面雙極性電晶體(I) (II)(98-2221-E-017-012-) | 主持人 | 2009/08至2010/07 | 國科會 |
| 積體化摻雜通道擬晶性異質結構場效電晶體之研究及邏輯電路應用(II))(97-2221-E-017-012-) | 主持人 | 2008/08至2009/07 | 國科會 |
| 積體化摻雜通道擬晶性異質結構場效電晶體之研究及邏輯電路應用(I))(96-2221-E-017-012-) | 主持人 | 2007/08月至2008年7月 | 國科會 |
| 極高閘極能障高度及導通電壓砷化鎵系列場效電晶體之製作與研究 (95-2221-E-017-013-) | 主持人 | 2006/08至2007/07 | 國科會 |
| 多功能磷化銦/砷化銦鎵異質接面雙極性電晶體之研究 (94-2215-E-017-002-) | 主持人 | 2005/08至2006/07 | 國科會 |
| 極高線性度磷化銦鎵/砷化銦鎵/砷化鎵駝峰式閘極擬晶性高電子遷移率電晶體之研究(II)(93-2215-E-017-001- ) | 主持人 | 2004/08至2005/07 | 國科會 |
| 極高線性度磷化銦鎵/砷化銦鎵/砷化鎵駝峰式閘極擬晶性高電子遷移率電晶體之研究(I)(92-2218-E-017-001- ) | 主持人 | 2003/08至2004/07 | 國科會 |
| 新式磷化銦/砷化銦鎵異質接面雙極性電晶體之研究及應用(91-2215-E-017-001- ) | 主持人 | 2002/08至2003/07 | 國科會 |
| 穿透式射極雙極性電晶體與金半場效電晶體共積體化之研究(90-2215-E-017-001- ) | 主持人 | 2001/08至2002/07 | 國科會 |
| 金氧半場效電晶體短通道效應之研究(大專生研究計畫) ( NSC 89- 2815- C-270-003R-E) |
指導教授 | 2000/07至2001/02 | 國科會 |
| 單原子層摻雜通道之駝峰式閘極場效電晶體微波特性之研究(NDL 90-C-053) | 主持人 | 2000/07至2001/06 | 國科會毫微米元件實驗室 |
| 具有單原子層摻雜通道之高線性轉導磷化銦鎵/砷化鎵駝峰式閘極場效電晶體(89-2215-E-017-001- ) | 主持人 | 2000/08至2001/07 | 國科會 |
| 共振穿透基極雙極性電晶體微波特性之研究 (NDL 89-C-056) |
主持人 | 1999/07至2000/12 | 國科會毫微米元件實驗室 |
| 具有砷化鋁鎵/砷化鎵/砷化銦鎵異質結構射極之功能型共振穿透基極式雙極性電晶體之研究與應用 (NSC 89-2215-E-270-003) |
主持人 | 1999/08至2000/07 | 國科會 |
專利著作(Click)
| 類別 | 專利名稱 | 國別 | 專利號碼 | 發明人 | 專利權人 | 專利期間 |
| 發明 | 變晶性積體化雙極場效電晶體 | 中華民國 | I456755 | 蔡榮輝 | 高雄師範大學 | 2014/10/11至2031/05/10 |
| 發明 | 具有奈米級多孔性感測金屬合層之半導體氫氣感測器及其製造方法 | 中華民國 | I384562 | 蔡榮輝 羅文雄 邱紹諺 梁昆傑 黃子軒 |
高雄師範大學 | 2013/02/01至2029/06/24 |
| 發明 | 超晶格基極異質結構雙極性電晶體 | 中華民國 | I343124 | 蔡榮輝 | 高雄師範大學 | 2011/06/01至2027/07/08 |
| 發明 | 共積體化互補式異質結構場效電晶體 | 中華民國 | I339900 | 蔡榮輝 | 高雄師範大學 | 2011/04/21至2027/04/30 |
| 發明 | 具負微分電阻之高電子遷移率電晶體 | 中華民國 | I341030 | 蔡榮輝 | 高雄師範大學 | 2011/04/01至2027/07/08 |
| 發明 | 積體化摻雜通道擬晶性異質結構場效電晶體 | 中華民國 | I336130 | 蔡榮輝 | 高雄師範大學 | 2011/01/11至2027/04/30 |
| 發明 | Pseudomorphic high electron mobility field effect transistor with high device linearity | 美國 | 6943386 | 蔡榮輝 | 高雄師範大學 | 2005 |
| 發明 | 具有極低補償電壓和高電流增益之異質接面雙極性電晶體 | 中華民國 | 222217 | 蔡榮輝 | 高雄師範大學 | 2004/10/11至2023/06/24 |
| 發明 | Heterojunction Bipolar Transistors with Extremely Low Offset Voltage and High Current Gain | 美國 | 6800880B1 | 蔡榮輝 | 高雄師範大學 | 2004/10/05至2023/08/08 |
| 發明 | 高線性度擬晶性高電子遷移率場效電晶體 | 中華民國 | 202067 | 蔡榮輝 | 高雄師範大學 | 2004/05/21至2023/06/24 |
| 發明 | High-breakdown voltage heterostructure field-effect transistor for high temperature operations | 美國 | 6,465,815B2 | 劉文超 蔡榮輝 常文龍 余國輝 林坤緯 |
國科會 | 2002/10/15至2020/12/28 |
| 發明 | 可耐高溫操作之高崩潰電壓異質結構場效電晶體 | 中華民國 | 140772 | 劉文超 蔡榮輝 常文龍 余國輝 林坤緯 |
國科會 | 2001/09/01至2020//06/13 |
| 發明 | 一種共振穿透異質結構雙極性電晶體 | 中華民國 | 135646 | 劉文超 蔡榮輝 鄭岫盈 |
國科會 | 2001/06/16至2020/02/09 |
| 發明 | 低補償電壓砷化銦鋁／砷化銦鎵異質侷限式雙極性電晶體 | 中華民國 | 900213 | 劉文超 羅文雄 蔡榮輝 |
國科會 | 2000/09/21至2017/06/06 |
| 發明 | 異質接面式雙極性電晶體 | 中華民國 | 111997 | 劉文超 羅文雄 蔡榮輝 |
國科會 | 2000/02/11至2017/02/26 |
| 發明 | 高功率磷化銦鎵／砷化鎵／磷化銦鎵雙δ摻雜雙異質接面雙極性電晶體 | 中華民國 | 110390 | 劉文超 羅文雄 蔡榮輝 |
國科會 | 1999/12/21至2016/10/02 |
| 發明 | Low offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistor | 美國 | 5977972 | 劉文超 蔡榮輝 羅文雄 |
國科會 | 1999/11/2至2017/9/15 |
| 新型 | 高功率磷化銦鎵/砷化鎵超晶格穿透式異質結構電晶體 | 中華民國 | 147429 | 劉文超 蔡榮輝 鄭岫盈 |
國科會 | 1999/05/21至2009/02/26 |
| 發明 | Camel-gate field-effect transistor with multiple modulation-doped channels | 美國 | 5789771 | 劉文超 羅文雄 蔡榮輝 |
國科會 | 1998/08/04至2016/12/11 |
| 發明 | Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT) | 美國 | 5698862 | 劉文超 羅文雄 蔡榮輝 |
國科會 | 1997/12/16至2016/12/13 |
| 發明 | 異質結構射極及異質結構基極式電晶體之製造方法及其結構 | 中華民國 | 86147 | 劉文超 羅文雄 蔡榮輝 |
國科會 | 1997/05/21至2016/08/26 |
| 發明 | 多層調變摻雜通道之駝峰式場效電晶體之製造方法及其結構 | 中華民國 | 83570 | 劉文超 羅文雄 蔡榮輝 |
國科會 | 1997/01/21至2016/08/26 |
參與國際會議(Click)
| 項次 | 會議 |
| 1. | Asia-Pacific Microwave Conference (APMC』1995), Kaist, Taejon, Korea. |
| 2. | The international Association of Science and Technology for Development (IASTED』1996), Banff, Alberta, Canada. |
| 3. | Conference on optoelectronic and microelectronic and devices (COMMAD』1996), Canberra, Australia. |
| 4. | Compound Semiconductors XXVI symposium, 191st ECS Meeting, Montreal, Canada, 1997. |
| 5. | Conference on optoelectronic and microelectronic materials and devices (COMMAD』2002), Sydeny, Australia. |
| 6. | The 4th International Workshop on Junction Technology (IWJC』2004), Shanghai, China. |
| 7. | The 5th International Vacuum Electron Sources Conference (IVESC2004), Beijing, China. |
| 8. | The 6th International Workshop on Junction Technology (IWJC'2006), Shanghai, China. |
| 9. | The 2nd International Symposium on Functional Materials (ISFM-2007), Hangzhou, China. |
| 10. | International Conference on Multifunctional Materials and Structures (MFMS 2008), Hong Kong. |
| 11. | 3rd International Meeting on Developments in Materials, Processes and Applications of Emerging Technologies, Manchester, United Kingdorm, 2009. |
| 12. | 2010 International Conference on Microwave and Millimeter Wave Technology, Chengdu, China. |
| 13. | The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP-2011), Dalian, China. |
| 14. | 2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2011), Tianjin, China. |
| 15. | The 5th International Conference on Plasma-Nanotechnology & Science, Aichi, Japan, 2012. |
| 16. | The 13th International Workshop on Junction Technology (IWJT2013), Kyoto, Japan |
| 17. | 26th International Microprocesses and Nanotechnology Conference (MNC 2013) Sapporo, Japan, 2013. |
| 18. | International Conference on Microelectronics and Plasma Technology, Gunsan, Korea, 2014. |
| 19. | 19th International Conferenceon Ternary and Multinary Compounds, Niigata, Japan, 2014. |
| 20. | 28th International Microprocesses and Nanotechnology Conference (MNC 2015) Toyama, Japan, 2015. |
| 21. | International Conference on Microelectronics and Plasma Technology (ICMAP 2016), Gyeongju, Korea, 2016. |
| 22. | Asian Conference on Engineering and Natural Sciences, Osaka, Japan, 2018. |
